dhg60u1200lb low loss and soft recovery high performance fast recovery diode 3~ rectifier bridge sonic fast recovery diode 1/2/3 7 4/5/6 8 9 part number dhg60u1200lb backside: isolated dav rr t ns 160 rrm 60 1200 = v = v i = a features / advantages: applications: package: planar passivated chips very low leakage current very short recovery time improved thermal behaviour very low irm-values very soft recovery behaviour avalanche voltage rated for reliable operation soft reverse recovery for low emi/rfi low irm reduces: - power dissipation within the diode - turn-on loss in the commutating switch antiparallel diode for high frequency switching devices antisaturation diode snubber diode free wheeling diode rectifiers in switch mode power supplies (smps) uninterruptible power supplies (ups) smpd industry convenient outline rohs compliant epoxy meets ul 94v-0 soldering pins for pcb mounting backside: dcb ceramic reduced weight advanced power cycling isolation voltage: v~ 3000 the data contained in this product data sheet is ex clusively intended for technically trained staff. t he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect t o his application. the specifications of our compon ents may not be considered as an assurance of compo nent characteristics. the information in the valid application- and assembly notes must be considered. should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact the sales office, which is responsible for yo u. due to technical requirements our product may conta in dangerous substances. for information on the typ es in question please contact the sales office, whi ch is responsible for you. should you intend to use the product in aviation, i n health or live endangering or life support applic ations, please notify. for any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. terms conditions of usage: ixys reserves the right to change limits, condition s and dimensions. 20131211b data according to iec 60747and per semiconductor un less otherwise specified ? 2013 ixys all rights reserved
dhg60u1200lb ns 19 a t vj = c reverse recovery time a 25 160 280 ns i rm max. reverse recovery current i f = a; 20 25 t = 125 c vj -d f = a/s 600 /dt t rr v = v 600 t vj = c25 t = 125 c vj v = v symbol definition ratings typ. max. i r v i a v f 1.99 r 1.2 k/w r min. 60 v rsm v 50 t = 25c vj t = c vj ma 0.5 v = v r t = 25c vj i = a f v t = c c 80 p tot 100 w t = 25c c r k/w 20 1200 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation conditions unit 1.93 t = 25c vj 125 v f0 v 1.35 t = c vj 150 r f 29 m ? v 2.30 t = c vj i = a f v 20 3.21 i = a f 60 i = a f 60 threshold voltage slope resistance for power loss calculation only a 125 v rrm v 1200 max. repetitive reverse blocking voltage t = 25c vj c j 11 junction capacitance v = v 600 t = 25c f = 1 mhz r vj pf i fsm t = 10 ms; (50 hz), sine; t = 45c vj max. forward surge current v = 0 v r t = c vj 150 200 a 1200 dav d = rectangular ? bridge output current thermal resistance junction to case thjc thermal resistance case to heatsink thch fast diode 1200 0.40 ixys reserves the right to change limits, condition s and dimensions. 20131211b data according to iec 60747and per semiconductor un less otherwise specified ? 2013 ixys all rights reserved
dhg60u1200lb ratings xxxxxxxxxx yywwa part number date code backside dcb pin 1 identifier u l logo data matrix code digits 1 to 19: part # 20 to 23: date code 24 to 25: assembly line 26 to 31: lot # 32: split lot 33 to 36: individual # ~ ~ ~ assembly line dh g 60 u 1200 lb part description diode sonic fast recovery diode extreme fast 3~ rectifier bridge smpd-b = = = current rating [a] reverse voltage [v] = = = = package t op c t vj c 150 virtual junction temperature -55 weight g 8.5 symbol definition typ. max. min. conditions operation temperature unit f c n 130 mounting force with clip 40 v v t = 1 second v t = 1 minute isolation voltage mm mm 1.6 4.0 d spp/app creepage distance on surface | striking distance th rough air d spb/apb terminal to backside i rms rms current 100 a per terminal 125 -55 terminal to terminal smpd DHG60U1200LB-TRR tape & reel 200 513414 dhg60u1200lb delivery mode quantity code no. ordering number marking on product alternative ordering 50/60 hz, rms; i 1 ma isol dhg60u1200lb 513421 blister 45 dhg60u1200lb standard 3000 isol t stg c 150 storage temperature -55 2500 threshold voltage v 1.35 m ? v 0 max r 0 max slope resistance * 27 equivalent circuits for simulation t = vj i v 0 r 0 fast diode 150 c * on die level ixys reserves the right to change limits, condition s and dimensions. 20131211b data according to iec 60747and per semiconductor un less otherwise specified ? 2013 ixys all rights reserved
dhg60u1200lb 1 2 3 6 5 4 9 8 7 3 2 , 7 ` 0 , 5 2 ` 0,05 (3x) 18 ` 0,1 2,75 ` 0,1 5,5 ` 0,1 13,5 ` 0,1 16,25 ` 0,1 19 ` 0,1 25 ` 0,2 0,5 ` 0,1 9 ` 0,1 2 3 ` 0 , 2 1 ` 0,05 (6x) 5 , 5 ` 0 , 1 2) 2) 1) a 0 , 5 5 ` 0 , 1 4 ` 0,05 4 , 8 5 ` 0 , 2 2 ` 0 , 2 c 0,05 3) a ( 8 : 1 ) 0 0,15 + 2 c 0,1 seating plane pin number notes: 1) potrusion may add 0.2 mm max. on each side 2) additional max. 0.05 mm per side by punching mis alignement or overlap of dam bar or bending compression 3) dcb area 10 to 50 m convex; position of dcb area in relation to plastic rim : 25 m (measured 2 mm from cu rim) 4) terminal plating: 0.2 - 1 m ni + 10 - 25 m sn (gal v.) cutting edges may be partially free of plating 1/2/3 7 4/5/6 8 9 outlines smpd ixys reserves the right to change limits, condition s and dimensions. 20131211b data according to iec 60747and per semiconductor un less otherwise specified ? 2013 ixys all rights reserved
dhg60u1200lb 300 400 500 600 700 800 900 1000 1100 1 2 3 4 5 6 7 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 50 6 0 q rr [c] i f [a] v f id ]v[ f /dt [a/s] t vj = 125c v r = 600 v 15 a 30 a 60 a fig. 7 typ. forward current versus v f fig. 8 typ. reverse recov.charge q rr vs. di/dt 300 400 500 600 700 800 900 1000 1100 0 10 20 30 40 50 60 70 i rr [a] di f /dt [a/s] t vj = 125c v r = 600 v 15 a 30 a 60 a fig. 9 typ. peak reverse current i rm vs. di/dt 300 400 500 600 700 800 900 1000 1100 0 100 200 300 400 500 600 700 t rr [ns] di f /dt [a/s] 15 a 30 a 60 a t vj = 125c v r = 600 v fig. 10 typ. recovery time t rr versus di/dt fig.11 typ. recovery energy e r e c versus di/dt 300 400 500 600 700 800 900 1000 1100 0.0 0.4 0.8 1.2 1.6 2.0 e rec [mj] di f /dt [a/s] t vj = 125c v r = 600 v 15 a 30 a 60 a 0.001 0.01 0.1 1 10 0.0 0.4 0.8 1.2 1.6 t p [s] z thjc [k/w] fig. 12 typ. transient thermal impedance t vj = 125c t vj = 25c fast diode ixys reserves the right to change limits, condition s and dimensions. 20131211b data according to iec 60747and per semiconductor un less otherwise specified ? 2013 ixys all rights reserved
|
